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About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

机译：关于异质结外延层之间的缓冲多孔层对异质双极晶体管中掺杂剂浓度分布的影响

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E Pankratov; E Bulaeva;
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1. About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors [J] . E.L. Pankratov, E.A. Bulaeva The international journal of multiphysics . 2015,第2期

机译：关于异质结构外延层之间的缓冲多孔层对异质双极晶体管中掺杂剂浓度分布的影响
2. Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1-xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology [J] . Seredin P. V., Goloshchapov D. L., Zolotukhin D. S., Semiconductors . 2019,第1期

机译：POR-SI缓冲层对具有纳米膜形态的外延Inxga1-XN / Si（111）异质结构的光学性质的影响
3. Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth [J] . Pankratov EL Nonlinear analysis. Real world applications . 2010,第3期

机译：外延生长过程中多层结构的不均匀性和非线性对掺杂区中掺杂物再分布的影响
4. MOCVD Growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration and Growth Duration on the In-Incorporation in InGaN [C] . Marco Schowalter, Brigitte Neubauer, Andreas Rosenauer, Materials Research Society Symposium . 2001

机译：Ga（Al）N / Ingan / Ga（Al）N-异质结构的MOCVD生长：缓冲层Al浓度和生长持续时间对Ingan掺入的影响
5. Zirconium nitride/aluminum nitride buffer layers for epitaxial growth of (indium,gallium) nitride on silicon substrates. [D] . Oliver, Mark H. 2008

机译：氮化锆/氮化铝缓冲层，用于在硅基板上外延生长（铟，镓）氮化物。
6. Robust In-Zn-O Thin-Film Transistors with aBilayer Heterostructure Design and a Low-Temperature Fabrication ProcessUsing Vacuum and Solution Deposited Layers [O] . Sang Yun Bang, Felix C. Mocanu, Tae Hoon Lee, 2020

机译：具有稳健的Zn-O薄膜晶体管双层异质结构设计和低温制造工艺使用真空和溶液沉积层
7. Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers [O] . H. Ehsani, N. Lewis, G.J. Nichols, 2006

机译：基材表面缺陷和TE掺杂剂浓度对藻类外延层晶体质量和电特性的影响
8. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures [R] . Storm, D. F., Katzer, D. S., Deen, D. A., 2010

机译：铍掺杂GaN缓冲层对外延alGaN / GaN异质结构电子性质的邻近效应

About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

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